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Three-terminal resistive switch based on metal/metal oxide redox reactions
A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition b...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547166/ https://www.ncbi.nlm.nih.gov/pubmed/28784981 http://dx.doi.org/10.1038/s41598-017-06954-x |
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author | Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul Beach, Geoffrey S. D. |
author_facet | Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul Beach, Geoffrey S. D. |
author_sort | Huang, Mantao |
collection | PubMed |
description | A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10(3) can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current. |
format | Online Article Text |
id | pubmed-5547166 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-55471662017-08-09 Three-terminal resistive switch based on metal/metal oxide redox reactions Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul Beach, Geoffrey S. D. Sci Rep Article A solid-state three-terminal resistive switch based on gate-voltage-tunable reversible oxidation of a thin-film metallic channel is demonstrated. The switch is composed of a cobalt wire placed under a GdOx layer and a Au top electrode. The lateral resistance of the wire changes with the transition between cobalt and cobalt oxide controlled by a voltage applied to the top electrode. The kinetics of the oxidation and reduction process are examined through time- and temperature-dependent transport measurements. It is shown that that reversible voltage induced lateral resistance switching with a ratio of 10(3) can be achieved at room temperature. The reversible non-volatile redox reaction between metal and metal oxide may provide additional degrees of freedom for post-fabrication control of properties of solid-state materials. This type of three-terminal device has potential applications in neuromorphic computing and multilevel data storage, as well as applications that require controlling a relatively large current. Nature Publishing Group UK 2017-08-07 /pmc/articles/PMC5547166/ /pubmed/28784981 http://dx.doi.org/10.1038/s41598-017-06954-x Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Huang, Mantao Tan, Aik Jun Mann, Maxwell Bauer, Uwe Ouedraogo, Raoul Beach, Geoffrey S. D. Three-terminal resistive switch based on metal/metal oxide redox reactions |
title | Three-terminal resistive switch based on metal/metal oxide redox reactions |
title_full | Three-terminal resistive switch based on metal/metal oxide redox reactions |
title_fullStr | Three-terminal resistive switch based on metal/metal oxide redox reactions |
title_full_unstemmed | Three-terminal resistive switch based on metal/metal oxide redox reactions |
title_short | Three-terminal resistive switch based on metal/metal oxide redox reactions |
title_sort | three-terminal resistive switch based on metal/metal oxide redox reactions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5547166/ https://www.ncbi.nlm.nih.gov/pubmed/28784981 http://dx.doi.org/10.1038/s41598-017-06954-x |
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