High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide

Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. Sintered ceramic target was prepared and used for deposition from oxide powder mixture having the molar ratio of In...

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Detalles Bibliográficos
Autores principales: Noviyana, Imas, Lestari, Annisa Dwi, Putri, Maryane, Won, Mi-Sook, Bae, Jong-Seong, Heo, Young-Woo, Lee, Hee Young
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551745/
https://www.ncbi.nlm.nih.gov/pubmed/28773058
http://dx.doi.org/10.3390/ma10070702

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551745/
https://www.ncbi.nlm.nih.gov/pubmed/28773058
http://dx.doi.org/10.3390/ma10070702

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