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Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators

Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to...

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Autores principales: Battiato, Marco, Aguilera, Irene, Sánchez-Barriga, Jaime
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551853/
https://www.ncbi.nlm.nih.gov/pubmed/28773171
http://dx.doi.org/10.3390/ma10070810
_version_ 1783256371012042752
author Battiato, Marco
Aguilera, Irene
Sánchez-Barriga, Jaime
author_facet Battiato, Marco
Aguilera, Irene
Sánchez-Barriga, Jaime
author_sort Battiato, Marco
collection PubMed
description Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized [Formula: see text] +Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron–electron and electron–phonon scatterings. Taking the prototypical insulator Bi [Formula: see text] Te [Formula: see text] as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron–electron and electron–phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials.
format Online
Article
Text
id pubmed-5551853
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-55518532017-08-11 Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators Battiato, Marco Aguilera, Irene Sánchez-Barriga, Jaime Materials (Basel) Article Quantum-phase transitions between trivial insulators and topological insulators differ from ordinary metal-insulator transitions in that they arise from the inversion of the bulk band structure due to strong spin–orbit coupling. Such topological phase transitions are unique in nature as they lead to the emergence of topological surface states which are characterized by a peculiar spin texture that is believed to play a central role in the generation and manipulation of dissipationless surface spin currents on ultrafast timescales. Here, we provide a generalized [Formula: see text] +Boltzmann approach for the description of ultrafast dynamics in topological insulators driven by electron–electron and electron–phonon scatterings. Taking the prototypical insulator Bi [Formula: see text] Te [Formula: see text] as an example, we test the robustness of our approach by comparing the theoretical prediction to results of time- and angle-resolved photoemission experiments. From this comparison, we are able to demonstrate the crucial role of the excited spin texture in the subpicosecond relaxation of transient electrons, as well as to accurately obtain the magnitude and strength of electron–electron and electron–phonon couplings. Our approach could be used as a generalized theory for three-dimensional topological insulators in the bulk-conducting transport regime, paving the way for the realization of a unified theory of ultrafast dynamics in topological materials. MDPI 2017-07-17 /pmc/articles/PMC5551853/ /pubmed/28773171 http://dx.doi.org/10.3390/ma10070810 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Battiato, Marco
Aguilera, Irene
Sánchez-Barriga, Jaime
Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title_full Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title_fullStr Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title_full_unstemmed Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title_short Generalized GW+Boltzmann Approach for the Description of Ultrafast Electron Dynamics in Topological Insulators
title_sort generalized gw+boltzmann approach for the description of ultrafast electron dynamics in topological insulators
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551853/
https://www.ncbi.nlm.nih.gov/pubmed/28773171
http://dx.doi.org/10.3390/ma10070810
work_keys_str_mv AT battiatomarco generalizedgwboltzmannapproachforthedescriptionofultrafastelectrondynamicsintopologicalinsulators
AT aguilerairene generalizedgwboltzmannapproachforthedescriptionofultrafastelectrondynamicsintopologicalinsulators
AT sanchezbarrigajaime generalizedgwboltzmannapproachforthedescriptionofultrafastelectrondynamicsintopologicalinsulators