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The Property, Preparation and Application of Topological Insulators: A Review

Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although...

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Detalles Bibliográficos
Autores principales: Tian, Wenchao, Yu, Wenbo, Shi, Jing, Wang, Yongkun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551857/
https://www.ncbi.nlm.nih.gov/pubmed/28773173
http://dx.doi.org/10.3390/ma10070814
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author Tian, Wenchao
Yu, Wenbo
Shi, Jing
Wang, Yongkun
author_facet Tian, Wenchao
Yu, Wenbo
Shi, Jing
Wang, Yongkun
author_sort Tian, Wenchao
collection PubMed
description Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI.
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spelling pubmed-55518572017-08-11 The Property, Preparation and Application of Topological Insulators: A Review Tian, Wenchao Yu, Wenbo Shi, Jing Wang, Yongkun Materials (Basel) Review Topological insulator (TI), a promising quantum and semiconductor material, has gapless surface state and narrow bulk band gap. Firstly, the properties, classifications and compounds of TI are introduced. Secondly, the preparation and doping of TI are assessed. Some results are listed. (1) Although various preparation methods are used to improve the crystal quality of the TI, it cannot reach the industrialization. Fermi level regulation still faces challenges; (2) The carrier type and lattice of TI are affected by non-magnetic impurities. The most promising property is the superconductivity at low temperature; (3) Magnetic impurities can destroy the time-reversal symmetry of the TI surface, which opens the band gap on the TI surface resulting in some novel physical effects such as quantum anomalous Hall effect (QAHE). Thirdly, this paper summarizes various applications of TI including photodetector, magnetic device, field-effect transistor (FET), laser, and so on. Furthermore, many of their parameters are compared based on TI and some common materials. It is found that TI-based devices exhibit excellent performance, but some parameters such as signal to noise ratio (S/N) are still lower than other materials. Finally, its advantages, challenges and future prospects are discussed. Overall, this paper provides an opportunity to improve crystal quality, doping regulation and application of TI. MDPI 2017-07-17 /pmc/articles/PMC5551857/ /pubmed/28773173 http://dx.doi.org/10.3390/ma10070814 Text en © 2017 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Tian, Wenchao
Yu, Wenbo
Shi, Jing
Wang, Yongkun
The Property, Preparation and Application of Topological Insulators: A Review
title The Property, Preparation and Application of Topological Insulators: A Review
title_full The Property, Preparation and Application of Topological Insulators: A Review
title_fullStr The Property, Preparation and Application of Topological Insulators: A Review
title_full_unstemmed The Property, Preparation and Application of Topological Insulators: A Review
title_short The Property, Preparation and Application of Topological Insulators: A Review
title_sort property, preparation and application of topological insulators: a review
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5551857/
https://www.ncbi.nlm.nih.gov/pubmed/28773173
http://dx.doi.org/10.3390/ma10070814
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