Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

SiBCN ceramics were introduced into porous Si(3)N(4) ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N(2) atmosphere. The effects of annealing temperatures on microstructure,...

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Detalles Bibliográficos
Autores principales: Li, Jianping, Zhao, Mingxi, Liu, Yongsheng, Chai, Nan, Ye, Fang, Qin, Hailong, Cheng, Laifei, Zhang, Litong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5554036/
https://www.ncbi.nlm.nih.gov/pubmed/28773015
http://dx.doi.org/10.3390/ma10060655
Descripción
Sumario:SiBCN ceramics were introduced into porous Si(3)N(4) ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI) technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N(2) atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si(3)N(4) and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si(3)N(4). The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

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