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Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap states. Thus, understanding defects and charge tr...

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Detalles Bibliográficos
Autores principales: Woo, Hyunsuk, Jeon, Sanghun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5557951/
https://www.ncbi.nlm.nih.gov/pubmed/28811475
http://dx.doi.org/10.1038/s41598-017-06613-1