Cargando…

Effect of hydrogen passivation on the decoupling of graphene on SiC(0001) substrate: First-principles calculations

Intercalation of hydrogen is important for understanding the decoupling of graphene from SiC(0001) substrate. Employing first-principles calculations, we have systematically studied the decoupling of graphene from SiC surface by H atoms intercalation from graphene boundary. It is found the passivati...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liu, Kang, Yan, Pinglan, Li, Jin, He, Chaoyu, Ouyang, Tao, Zhang, Chunxiao, Tang, Chao, Zhong, Jianxin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5559521/ https://www.ncbi.nlm.nih.gov/pubmed/28814766 http://dx.doi.org/10.1038/s41598-017-09161-w

Ejemplares similares

Selective Fabrication of Bismuthene and α-Bi on Hydrogen-Terminated SiC(0001)
por: Yaegashi, Ken, et al.
Publicado: (2022)

Quantitative multichannel NC-AFM data analysis of graphene growth on SiC(0001)
por: Held, Christian, et al.
Publicado: (2012)

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature
por: Telychko, Mykola, et al.
Publicado: (2015)

High Electron Mobility in Epitaxial Trilayer Graphene on Off-axis SiC(0001)
por: Hajlaoui, Mahdi, et al.
Publicado: (2016)

Routes to rupture and folding of graphene on rough 6H-SiC(0001) and their identification
por: Temmen, M, et al.
Publicado: (2013)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
por: Pallecchi, E., et al.
Publicado: (2014)

Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction
por: Razado-Colambo, I., et al.
Publicado: (2018)

Nanoscale structural characterization of epitaxial graphene grown on off-axis 4H-SiC (0001)
por: Vecchio, Carmelo, et al.
Publicado: (2011)

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)
por: Li, Lianbi, et al.
Publicado: (2017)

Density functional theory calculations on graphene/α-SiO(2)(0001) interface
por: Ao, Zhimin, et al.
Publicado: (2012)

From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
por: Li, Ming-Yu, et al.
Publicado: (2015)

Intercalation of Au Atoms into SiC(0001)/Buffer Interfaces–A First-Principles Density Functional Theory Study
por: Bayani, Amirhossein, et al.
Publicado: (2020)

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer
por: Pierucci, Debora, et al.
Publicado: (2016)

Corrigendum: From the Au nano-clusters to the nanoparticles on 4H-SiC (0001)
por: Li, Ming-Yu, et al.
Publicado: (2016)

αSiC - βSiC - graphene composites
por: Razmjoo, Ali, et al.
Publicado: (2023)

Nature of the Insulating Ground State of the Two-Dimensional Sn Atom Lattice on SiC(0001)
por: Yi, Seho, et al.
Publicado: (2016)

Graphene on SiC Substrate as Biosensor: Theoretical Background, Preparation, and Characterization
por: Lebedev, Alexander A., et al.
Publicado: (2021)

Induced growth of quasi-free-standing graphene on SiC substrates
por: Liu, Zhenxing, et al.
Publicado: (2019)

Enhanced Phase Transition Properties of VO(2) Thin Films on 6H-SiC (0001) Substrate Prepared by Pulsed Laser Deposition
por: Cheng, Xiankun, et al.
Publicado: (2019)

Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
por: Lewandków, Rafał, et al.
Publicado: (2021)

Graphite, graphene on SiC, and graphene nanoribbons: Calculated images with a numerical FM-AFM
por: Castanié, Fabien, et al.
Publicado: (2012)

Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates
por: Matusalem, Filipe, et al.
Publicado: (2017)

Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
por: Cojocaru, Ovidiu, et al.
Publicado: (2021)

Effects of Transition Element Additions on the Interfacial Interaction and Electronic Structure of Al(111)/6H-SiC(0001) Interface: A First-Principles Study
por: Wang, Changqing, et al.
Publicado: (2021)

Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates
por: Chatterjee, Atasi, et al.
Publicado: (2022)

First principles calculation of the nonhydrostatic effects on structure and Raman frequency of 3C-SiC
por: Lei, Liu, et al.
Publicado: (2018)

Lattice thermal conductivity of borophene from first principle calculation
por: Xiao, Huaping, et al.
Publicado: (2017)

Surface passivation and optical characterization of Al(2)O(3)/a-SiC(x) stacks on c-Si substrates
por: López, Gema, et al.
Publicado: (2013)

Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
por: Gogneau, Noelle, et al.
Publicado: (2014)

Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
por: Camara, Nicolas, et al.
Publicado: (2011)

Substrate mediated properties of gold monolayers on SiC
por: Shtepliuk, Ivan, et al.
Publicado: (2023)

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates
por: Burrows, Christopher W., et al.
Publicado: (2013)

Competition between surface modification and abrasive polishing: a method of controlling the surface atomic structure of 4H-SiC (0001)
por: Deng, Hui, et al.
Publicado: (2015)

Modeling of amorphous SiC(x)O(6/5) by classical molecular dynamics and first principles calculations
por: Liao, Ningbo, et al.
Publicado: (2017)

Atomic structures and interfacial engineering of ultrathin indium intercalated between graphene and a SiC substrate
por: Pham, Van Dong, et al.
Publicado: (2023)

Electronic Structures of Penta-SiC(2) and g-SiC(3) Nanoribbons: A First-Principles Study
por: Liu, Zhichao, et al.
Publicado: (2023)

Quantum Effects in the Diffusion of Hydrogen on Ru(0001)
por: McIntosh, Eliza M., et al.
Publicado: (2013)

Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate
por: Ohno, Yasuhide, et al.
Publicado: (2023)

SiC surface orientation and Si loss rate effects on epitaxial graphene
por: Kim, Moonkyung, et al.
Publicado: (2012)

Investigation of the Young’s Modulus and the Residual Stress of 4H-SiC Circular Membranes on 4H-SiC Substrates
por: Ben Messaoud, Jaweb, et al.
Publicado: (2019)

Cannot write session to /tmp/vufind_sessions/sess_t0ffnufv9lekv1u9mi48tnukaf