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Tailoring Heterovalent Interface Formation with Light
Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interfaces between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to f...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5561236/ https://www.ncbi.nlm.nih.gov/pubmed/28819295 http://dx.doi.org/10.1038/s41598-017-07670-2 |