Boron-Incorporating Silicon Nanocrystals Embedded in SiO(2): Absence of Free Carriers vs. B-Induced Defects

Boron (B) doping of silicon nanocrystals requires the incorporation of a B-atom on a lattice site of the quantum dot and its ionization at room temperature. In case of successful B-doping the majority carriers (holes) should quench the photoluminescence of Si nanocrystals via non-radiative Auger rec...

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Detalles Bibliográficos
Autores principales: Hiller, Daniel, López-Vidrier, Julian, Gutsch, Sebastian, Zacharias, Margit, Wahl, Michael, Bock, Wolfgang, Brodyanski, Alexander, Kopnarski, Michael, Nomoto, Keita, Valenta, Jan, König, Dirk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566216/
https://www.ncbi.nlm.nih.gov/pubmed/28827565
http://dx.doi.org/10.1038/s41598-017-08814-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566216/
https://www.ncbi.nlm.nih.gov/pubmed/28827565
http://dx.doi.org/10.1038/s41598-017-08814-0

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