Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switch...

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Detalles Bibliográficos
Autores principales: Han, Su‐Ting, Hu, Liang, Wang, Xiandi, Zhou, Ye, Zeng, Yu‐Jia, Ruan, Shuangchen, Pan, Caofeng, Peng, Zhengchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2017
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566243/
https://www.ncbi.nlm.nih.gov/pubmed/28852609
http://dx.doi.org/10.1002/advs.201600435
Descripción
Sumario:Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry. [Image: see text]

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