Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switch...

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Detalles Bibliográficos
Autores principales: Han, Su‐Ting, Hu, Liang, Wang, Xiandi, Zhou, Ye, Zeng, Yu‐Jia, Ruan, Shuangchen, Pan, Caofeng, Peng, Zhengchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2017
Materias:
Communications
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566243/
https://www.ncbi.nlm.nih.gov/pubmed/28852609
http://dx.doi.org/10.1002/advs.201600435
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author Han, Su‐Ting
Hu, Liang
Wang, Xiandi
Zhou, Ye
Zeng, Yu‐Jia
Ruan, Shuangchen
Pan, Caofeng
Peng, Zhengchun
author_facet Han, Su‐Ting
Hu, Liang
Wang, Xiandi
Zhou, Ye
Zeng, Yu‐Jia
Ruan, Shuangchen
Pan, Caofeng
Peng, Zhengchun
author_sort Han, Su‐Ting
collection PubMed
description Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry. [Image: see text]
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spelling pubmed-55662432017-08-29 Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics Han, Su‐Ting Hu, Liang Wang, Xiandi Zhou, Ye Zeng, Yu‐Jia Ruan, Shuangchen Pan, Caofeng Peng, Zhengchun Adv Sci (Weinh) Communications Solution‐processed black phosphorus quantum‐dot‐based resistive random access memory is demonstrated with tunable characteristics, multilevel data storage, and ultrahigh ON/OFF ratio. Effects of the black phosphorous quantum dots layer thickness and the compliance current setting on resistive switching behavior are systematically studied. Our devices can yield a series of SET voltages and current levels, hence having the potential for practical applications in the flexible electronics industry. [Image: see text] John Wiley and Sons Inc. 2017-03-16 /pmc/articles/PMC5566243/ /pubmed/28852609 http://dx.doi.org/10.1002/advs.201600435 Text en © 2017 The Authors. Published by WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim This is an open access article under the terms of the Creative Commons Attribution (http://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Han, Su‐Ting
Hu, Liang
Wang, Xiandi
Zhou, Ye
Zeng, Yu‐Jia
Ruan, Shuangchen
Pan, Caofeng
Peng, Zhengchun
Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title_full Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title_fullStr Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title_full_unstemmed Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title_short Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics
title_sort black phosphorus quantum dots with tunable memory properties and multilevel resistive switching characteristics
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566243/
https://www.ncbi.nlm.nih.gov/pubmed/28852609
http://dx.doi.org/10.1002/advs.201600435
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