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Symmetric and Asymmetric Magnetic Tunnel Junctions with Embedded Nanoparticles: Effects of Size Distribution and Temperature on Tunneling Magnetoresistance and Spin Transfer Torque
The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d (av) < 1.8 nm. Temperatu...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5566438/ https://www.ncbi.nlm.nih.gov/pubmed/28827591 http://dx.doi.org/10.1038/s41598-017-08354-7 |
Sumario: | The problem of the ballistic electron tunneling is considered in magnetic tunnel junction with embedded non-magnetic nanoparticles (NP-MTJ), which creates additional conducting middle layer. The strong temperature impact was found in the system with averaged NP diameter d (av) < 1.8 nm. Temperature simulation is consistent with experimental observations showing the transition between dip and classical dome-like tunneling magnetoresistance (TMR) voltage behaviors. The low temperature approach also predicts step-like TMR and quantized in-plane spin transfer torque (STT) effects. The robust asymmetric STT respond is found due to voltage sign inversion in NP-MTJs with barrier asymmetry. Furthermore, it is shown how size distribution of NPs as well as quantization rules modify the spin-current filtering properties of the nanoparticles in ballistic regime. Different quantization rules for the transverse component of the wave vector are considered to overpass the dimensional threshold (d (av) ≈ 1.8 nm) between quantum well and bulk-assisted states of the middle layer. |
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