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Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have be...

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Detalles Bibliográficos
Autores principales: Hosen, Md. Billal, Bahar, Ali Newaz, Ali, Md. Karamot, Asaduzzaman,, Md.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5567395/
https://www.ncbi.nlm.nih.gov/pubmed/28861448
http://dx.doi.org/10.1016/j.dib.2017.07.054
Descripción
Sumario:This article represents the baseline data of the several semiconductor materials used in the model of a CIGS thin film solar cell with an inclusion of ZnS buffer layer. As well, input parameters, contact layer data and operating conditions for CIGS solar cell simulation with ZnS buffer layer have been described. The schematic diagram of photovoltaic solar cell has been depicted. Moreover, the most important performance measurement graph, J-V characteristic curve, resulting from CIGS solar cell simulation has been analyzed to estimate the optimum values of fill factor and cell efficiency. These optimum results have been obtained from the open circuit voltage, short circuit current density, and the maximum points of voltage and current density generated from the cell.