Evaluation of the concentration of point defects in GaN

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN gr...

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Detalles Bibliográficos
Autores principales: Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5570983/
https://www.ncbi.nlm.nih.gov/pubmed/28839151
http://dx.doi.org/10.1038/s41598-017-08570-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5570983/
https://www.ncbi.nlm.nih.gov/pubmed/28839151
http://dx.doi.org/10.1038/s41598-017-08570-1

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