Cargando…

Evaluation of the concentration of point defects in GaN

Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS). Defect-related PL intensity in undoped GaN gr...

Descripción completa

Detalles Bibliográficos
Autores principales:	Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu., Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5570983/ https://www.ncbi.nlm.nih.gov/pubmed/28839151 http://dx.doi.org/10.1038/s41598-017-08570-1

Ejemplares similares

Two yellow luminescence bands in undoped GaN
por: Reshchikov, M. A., et al.
Publicado: (2018)

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
por: Reshchikov, M. A., et al.
Publicado: (2020)

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence
por: Reshchikov, M. A., et al.
Publicado: (2016)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

MOCVD Growth and Characterization of Be-Doped GaN
por: McEwen, Benjamin, et al.
Publicado: (2022)

DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond–GaN Interfaces
por: Sznajder, Malgorzata, et al.
Publicado: (2021)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
por: Lottigier, Pierre, et al.
Publicado: (2023)

Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
por: Kumar, Ashutosh, et al.
Publicado: (2018)

Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study
por: Hrytsak, Roman, et al.
Publicado: (2022)

Defect-selective-etched porous GaN as a buffer layer for high efficiency InGaN/GaN light-emitting diodes
por: Park, Ah Hyun, et al.
Publicado: (2022)

Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells
por: Barrett, R. M., et al.
Publicado: (2023)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments
por: Ene, Vladimir Lucian, et al.
Publicado: (2020)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Impact of Surface Chemistry and Doping Concentrations on Biofunctionalization of GaN/Ga‒In‒N Quantum Wells
por: Naskar, Nilanjon, et al.
Publicado: (2020)

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
por: Dai, Jin-Ji, et al.
Publicado: (2021)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms
por: Zając, Magdalena A, et al.
Publicado: (2023)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Dephasing by optical phonons in GaN defect single-photon emitters
por: Geng, Yifei, et al.
Publicado: (2023)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Amphoteric arsenic in GaN
por: Wahl, U, et al.
Publicado: (2007)

Annealing of ion-implanted GaN
por: Burchard, A, et al.
Publicado: (1999)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Evidence of N substitution by Mn in GaN
por: Pereira, LMC, et al.
Publicado: (2013)

Pioneering evaluation of GaN transistors in geostationary satellites
por: Mostardinha, Hugo, et al.
Publicado: (2022)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface
por: Nishio, Kengo, et al.
Publicado: (2018)

Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Cannot write session to /tmp/vufind_sessions/sess_7io3r203fom0fmg1299p6e7a0b