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Giant magnetoresistance in lateral metallic nanostructures for spintronic applications

In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than...

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Detalles Bibliográficos
Autores principales: Zahnd, G., Vila, L., Pham, V. T., Marty, A., Beigné, C., Vergnaud, C., Attané, J. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5573406/
https://www.ncbi.nlm.nih.gov/pubmed/28842573
http://dx.doi.org/10.1038/s41598-017-09086-4
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author Zahnd, G.
Vila, L.
Pham, V. T.
Marty, A.
Beigné, C.
Vergnaud, C.
Attané, J. P.
author_facet Zahnd, G.
Vila, L.
Pham, V. T.
Marty, A.
Beigné, C.
Vergnaud, C.
Attané, J. P.
author_sort Zahnd, G.
collection PubMed
description In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications.
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spelling pubmed-55734062017-09-01 Giant magnetoresistance in lateral metallic nanostructures for spintronic applications Zahnd, G. Vila, L. Pham, V. T. Marty, A. Beigné, C. Vergnaud, C. Attané, J. P. Sci Rep Article In this letter, we discuss the shift observed in spintronics from the current-perpendicular-to-plane geometry towards lateral geometries, illustrating the new opportunities offered by this configuration. Using CoFe-based all-metallic LSVs, we show that giant magnetoresistance variations of more than 10% can be obtained, competitive with the current-perpendicular-to-plane giant magnetoresistance. We then focus on the interest of being able to tailor freely the geometries. On the one hand, by tailoring the non-magnetic parts, we show that it is possible to enhance the spin signal of giant magnetoresistance structures. On the other hand, we show that tailoring the geometry of lateral structures allows creating a multilevel memory with high spin signals, by controlling the coercivity and shape anisotropy of the magnetic parts. Furthermore, we study a new device in which the magnetization direction of a nanodisk can be detected. We thus show that the ability to control the magnetic properties can be used to take advantage of all the spin degrees of freedom, which are usually occulted in current-perpendicular-to-plane devices. This flexibility of lateral structures relatively to current-perpendicular-to-plane structures is thus found to offer a new playground for the development of spintronic applications. Nature Publishing Group UK 2017-08-25 /pmc/articles/PMC5573406/ /pubmed/28842573 http://dx.doi.org/10.1038/s41598-017-09086-4 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Zahnd, G.
Vila, L.
Pham, V. T.
Marty, A.
Beigné, C.
Vergnaud, C.
Attané, J. P.
Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title_full Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title_fullStr Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title_full_unstemmed Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title_short Giant magnetoresistance in lateral metallic nanostructures for spintronic applications
title_sort giant magnetoresistance in lateral metallic nanostructures for spintronic applications
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5573406/
https://www.ncbi.nlm.nih.gov/pubmed/28842573
http://dx.doi.org/10.1038/s41598-017-09086-4
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