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Effects of H(2) High-pressure Annealing on HfO(2)/Al(2)O(3)/In(0.53)Ga(0.47)As Capacitors: Chemical Composition and Electrical Characteristics
We studied the impact of H(2) pressure during post-metallization annealing on the chemical composition of a HfO(2)/Al(2)O(3) gate stack on a HCl wet-cleaned In(0.53)Ga(0.47)As substrate by comparing the forming gas annealing (at atmospheric pressure with a H(2) partial pressure of 0.04 bar) and H(2)...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575061/ https://www.ncbi.nlm.nih.gov/pubmed/28852035 http://dx.doi.org/10.1038/s41598-017-09888-6 |
Sumario: | We studied the impact of H(2) pressure during post-metallization annealing on the chemical composition of a HfO(2)/Al(2)O(3) gate stack on a HCl wet-cleaned In(0.53)Ga(0.47)As substrate by comparing the forming gas annealing (at atmospheric pressure with a H(2) partial pressure of 0.04 bar) and H(2) high-pressure annealing (H(2)-HPA at 30 bar) methods. In addition, the effectiveness of H(2)-HPA on the passivation of the interface states was compared for both p- and n-type In(0.53)Ga(0.47)As substrates. The decomposition of the interface oxide and the subsequent out-diffusion of In and Ga atoms toward the high-k film became more significant with increasing H(2) pressure. Moreover, the increase in the H(2) pressure significantly improved the capacitance‒voltage characteristics, and its effect was more pronounced on the p-type In(0.53)Ga(0.47)As substrate. However, the H(2)-HPA induced an increase in the leakage current, probably because of the out-diffusion and incorporation of In/Ga atoms within the high-k stack. |
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