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Effects of H(2) High-pressure Annealing on HfO(2)/Al(2)O(3)/In(0.53)Ga(0.47)As Capacitors: Chemical Composition and Electrical Characteristics

We studied the impact of H(2) pressure during post-metallization annealing on the chemical composition of a HfO(2)/Al(2)O(3) gate stack on a HCl wet-cleaned In(0.53)Ga(0.47)As substrate by comparing the forming gas annealing (at atmospheric pressure with a H(2) partial pressure of 0.04 bar) and H(2)...

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Detalles Bibliográficos
Autores principales:	Choi, Sungho, An, Youngseo, Lee, Changmin, Song, Jeongkeun, Nguyen, Manh-Cuong, Byun, Young-Chul, Choi, Rino, McIntyre, Paul C., Kim, Hyoungsub
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575061/ https://www.ncbi.nlm.nih.gov/pubmed/28852035 http://dx.doi.org/10.1038/s41598-017-09888-6

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