Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

Improvements in the overall efficiency and significant reduction in the efficiency droop are observed in three-dimensional (3D) GaN truncated pyramid structures fabricated with air void and a SiO(2) layer. This 3D structure was fabricated using a self-aligned twofold epitaxial lateral overgrowth tec...

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Detalles Bibliográficos
Autores principales: Yoo, Yang-Seok, Song, Hyun Gyu, Jang, Min-Ho, Lee, Sang-Won, Cho, Yong-Hoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575063/
https://www.ncbi.nlm.nih.gov/pubmed/28852044
http://dx.doi.org/10.1038/s41598-017-10086-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575063/
https://www.ncbi.nlm.nih.gov/pubmed/28852044
http://dx.doi.org/10.1038/s41598-017-10086-7

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