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Observation of Third-order Nonlinearities in Graphene Oxide Film at Telecommunication Wavelengths

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here we report the observation of ultrahigh...

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Detalles Bibliográficos
Autores principales: Xu, Xiaochuan, Zheng, Xiaorui, He, Feng, Wang, Zheng, Subbaraman, Harish, Wang, Yaguo, Jia, Baohua, Chen, Ray T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575126/
https://www.ncbi.nlm.nih.gov/pubmed/28851947
http://dx.doi.org/10.1038/s41598-017-09583-6
Descripción
Sumario:All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here we report the observation of ultrahigh third-order nonlinearity about 0.45 cm(2)/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantly advance the performance of all-optical switches.