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Large and accessible conductivity of charged domain walls in lithium niobate
Ferroelectric domain walls are interfaces between areas of a material that exhibits different directions of spontaneous polarization. The properties of domain walls can be very different from those of the undisturbed material. Metallic-like conductivity of charged domain walls (CDWs) in nominally in...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575345/ https://www.ncbi.nlm.nih.gov/pubmed/28851946 http://dx.doi.org/10.1038/s41598-017-09703-2 |
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author | Werner, Christoph S. Herr, Simon J. Buse, Karsten Sturman, Boris Soergel, Elisabeth Razzaghi, Cina Breunig, Ingo |
author_facet | Werner, Christoph S. Herr, Simon J. Buse, Karsten Sturman, Boris Soergel, Elisabeth Razzaghi, Cina Breunig, Ingo |
author_sort | Werner, Christoph S. |
collection | PubMed |
description | Ferroelectric domain walls are interfaces between areas of a material that exhibits different directions of spontaneous polarization. The properties of domain walls can be very different from those of the undisturbed material. Metallic-like conductivity of charged domain walls (CDWs) in nominally insulating ferroelectrics was predicted in 1973 and detected recently. This important effect is still in its infancy: The electric currents are still smaller than expected, the access to the conductivity at CDWs is hampered by contact barriers, and stability is low because of sophisticated domain structures or proximity of the Curie point. Here, we report on large, accessible, and stable conductivity at CDWs in lithium niobate (LN) crystals – a vital material for photonics. Our results mark a breakthrough: Increase of conductivity at CDWs by more than 13 orders of magnitude compared to that of the bulk, access to the effect via ohmic and diode-like contacts, and high stability for temperatures T ≤ 70 °C are demonstrated. A promising and now realistic prospect is to combine CDW functionalities with linear and nonlinear optical phenomena. Our findings allow new generations of adaptive-optical elements, of electrically controlled integrated-optical chips for quantum photonics, and of advanced LN-semiconductor hybrid optoelectronic devices. |
format | Online Article Text |
id | pubmed-5575345 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-55753452017-09-01 Large and accessible conductivity of charged domain walls in lithium niobate Werner, Christoph S. Herr, Simon J. Buse, Karsten Sturman, Boris Soergel, Elisabeth Razzaghi, Cina Breunig, Ingo Sci Rep Article Ferroelectric domain walls are interfaces between areas of a material that exhibits different directions of spontaneous polarization. The properties of domain walls can be very different from those of the undisturbed material. Metallic-like conductivity of charged domain walls (CDWs) in nominally insulating ferroelectrics was predicted in 1973 and detected recently. This important effect is still in its infancy: The electric currents are still smaller than expected, the access to the conductivity at CDWs is hampered by contact barriers, and stability is low because of sophisticated domain structures or proximity of the Curie point. Here, we report on large, accessible, and stable conductivity at CDWs in lithium niobate (LN) crystals – a vital material for photonics. Our results mark a breakthrough: Increase of conductivity at CDWs by more than 13 orders of magnitude compared to that of the bulk, access to the effect via ohmic and diode-like contacts, and high stability for temperatures T ≤ 70 °C are demonstrated. A promising and now realistic prospect is to combine CDW functionalities with linear and nonlinear optical phenomena. Our findings allow new generations of adaptive-optical elements, of electrically controlled integrated-optical chips for quantum photonics, and of advanced LN-semiconductor hybrid optoelectronic devices. Nature Publishing Group UK 2017-08-29 /pmc/articles/PMC5575345/ /pubmed/28851946 http://dx.doi.org/10.1038/s41598-017-09703-2 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Werner, Christoph S. Herr, Simon J. Buse, Karsten Sturman, Boris Soergel, Elisabeth Razzaghi, Cina Breunig, Ingo Large and accessible conductivity of charged domain walls in lithium niobate |
title | Large and accessible conductivity of charged domain walls in lithium niobate |
title_full | Large and accessible conductivity of charged domain walls in lithium niobate |
title_fullStr | Large and accessible conductivity of charged domain walls in lithium niobate |
title_full_unstemmed | Large and accessible conductivity of charged domain walls in lithium niobate |
title_short | Large and accessible conductivity of charged domain walls in lithium niobate |
title_sort | large and accessible conductivity of charged domain walls in lithium niobate |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5575345/ https://www.ncbi.nlm.nih.gov/pubmed/28851946 http://dx.doi.org/10.1038/s41598-017-09703-2 |
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