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High-quality monolayer superconductor NbSe(2) grown by chemical vapour deposition

The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and...

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Detalles Bibliográficos
Autores principales: Wang, Hong, Huang, Xiangwei, Lin, Junhao, Cui, Jian, Chen, Yu, Zhu, Chao, Liu, Fucai, Zeng, Qingsheng, Zhou, Jiadong, Yu, Peng, Wang, Xuewen, He, Haiyong, Tsang, Siu Hon, Gao, Weibo, Suenaga, Kazu, Ma, Fengcai, Yang, Changli, Lu, Li, Yu, Ting, Teo, Edwin Hang Tong, Liu, Guangtong, Liu, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5577275/
https://www.ncbi.nlm.nih.gov/pubmed/28855521
http://dx.doi.org/10.1038/s41467-017-00427-5
Descripción
Sumario:The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe(2). Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe(2), and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe(2) with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.