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Mie-Metamaterials-Based Thermal Emitter for Near-Field Thermophotovoltaic Systems

In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film...

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Detalles Bibliográficos
Autores principales: Ghanekar, Alok, Tian, Yanpei, Zhang, Sinong, Cui, Yali, Zheng, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5578251/
https://www.ncbi.nlm.nih.gov/pubmed/28773241
http://dx.doi.org/10.3390/ma10080885
Descripción
Sumario:In this work, we theoretically analyze the performance characteristics of a near-field thermophotovoltaic system consisting a Mie-metamaterial emitter and GaSb-based photovoltaic cell at separations less than the thermal wavelength. The emitter consists of a tungsten nanoparticle-embedded thin film of SiO [Formula: see text] deposited on bulk tungsten. Numerical results presented here are obtained using formulae derived from dyadic Green’s function formalism and Maxwell-Garnett-Mie theory. We show that via the inclusion of tungsten nanoparticles, the thin layer of SiO [Formula: see text] acts like an effective medium that enhances selective radiative heat transfer for the photons above the band gap of GaSb. We analyze thermophotovoltaic (TPV) performance for various volume fractions of tungsten nanoparticles and thicknesses of SiO [Formula: see text].