Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n(+)/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a rema...

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Detalles Bibliográficos
Autores principales: Zhang, Ting, Liu, Bohan, Ahmad, Waseem, Xuan, Yaoyu, Ying, Xiangxiao, Liu, Zhijun, Chen, Zhi, Li, Shibin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5583137/
https://www.ncbi.nlm.nih.gov/pubmed/28871559
http://dx.doi.org/10.1186/s11671-017-2287-2
Descripción
Sumario:Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n(+)/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 10(14) ions/cm(2) has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.

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