Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes

Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n(+)/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a rema...

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Detalles Bibliográficos
Autores principales: Zhang, Ting, Liu, Bohan, Ahmad, Waseem, Xuan, Yaoyu, Ying, Xiangxiao, Liu, Zhijun, Chen, Zhi, Li, Shibin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5583137/
https://www.ncbi.nlm.nih.gov/pubmed/28871559
http://dx.doi.org/10.1186/s11671-017-2287-2
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author Zhang, Ting
Liu, Bohan
Ahmad, Waseem
Xuan, Yaoyu
Ying, Xiangxiao
Liu, Zhijun
Chen, Zhi
Li, Shibin
author_facet Zhang, Ting
Liu, Bohan
Ahmad, Waseem
Xuan, Yaoyu
Ying, Xiangxiao
Liu, Zhijun
Chen, Zhi
Li, Shibin
author_sort Zhang, Ting
collection PubMed
description Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n(+)/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 10(14) ions/cm(2) has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors.
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spelling pubmed-55831372017-09-22 Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes Zhang, Ting Liu, Bohan Ahmad, Waseem Xuan, Yaoyu Ying, Xiangxiao Liu, Zhijun Chen, Zhi Li, Shibin Nanoscale Res Lett Nano Express Impurity-mediated near-infrared (NIR) photoresponse in silicon is of great interest for photovoltaics and photodetectors. In this paper, we have fabricated a series of n(+)/p photodetectors with hyperdoped silicon prepared by ion-implantation and femtosecond pulsed laser. These devices showed a remarkable enhancement on absorption and photoresponse at NIR wavelengths. The device fabricated with implantation dose of 10(14) ions/cm(2) has exhibited the best performance. The proposed method offers an approach to fabricate low-cost broadband silicon-based photodetectors. Springer US 2017-09-04 /pmc/articles/PMC5583137/ /pubmed/28871559 http://dx.doi.org/10.1186/s11671-017-2287-2 Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Zhang, Ting
Liu, Bohan
Ahmad, Waseem
Xuan, Yaoyu
Ying, Xiangxiao
Liu, Zhijun
Chen, Zhi
Li, Shibin
Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title_full Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title_fullStr Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title_full_unstemmed Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title_short Optical and Electronic Properties of Femtosecond Laser-Induced Sulfur-Hyperdoped Silicon N+/P Photodiodes
title_sort optical and electronic properties of femtosecond laser-induced sulfur-hyperdoped silicon n+/p photodiodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5583137/
https://www.ncbi.nlm.nih.gov/pubmed/28871559
http://dx.doi.org/10.1186/s11671-017-2287-2
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