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Controlled self-organization of polymer nanopatterns over large areas

Self-assembly methods allow to obtain ordered patterns on surfaces with exquisite precision, but often lack in effectiveness over large areas. Here we report on the realization of hierarchically ordered polymethylmethacrylate (PMMA) nanofibres and nanodots over large areas from solution via a fast,...

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Autores principales: Eryilmaz, Ilknur Hatice, Mohanraj, John, Dal Zilio, Simone, Fraleoni-Morgera, Alessandro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5585330/
https://www.ncbi.nlm.nih.gov/pubmed/28874796
http://dx.doi.org/10.1038/s41598-017-09463-z
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author Eryilmaz, Ilknur Hatice
Mohanraj, John
Dal Zilio, Simone
Fraleoni-Morgera, Alessandro
author_facet Eryilmaz, Ilknur Hatice
Mohanraj, John
Dal Zilio, Simone
Fraleoni-Morgera, Alessandro
author_sort Eryilmaz, Ilknur Hatice
collection PubMed
description Self-assembly methods allow to obtain ordered patterns on surfaces with exquisite precision, but often lack in effectiveness over large areas. Here we report on the realization of hierarchically ordered polymethylmethacrylate (PMMA) nanofibres and nanodots over large areas from solution via a fast, easy and low-cost method named ASB-SANS, based on a ternary solution that is cast on the substrate. Simple changes to the ternary solution composition allow to control the transition from nanofibres to nanodots, via a wide range of intermediate topologies. The ternary solution includes the material to be patterned, a liquid solvent and a solid substance able to sublimate. The analysis of the fibres/dots width and inter-pattern distance variations with respect to the ratio between the solution components suggests that the macromolecular chains mobility in the solidified sublimating substance follows Zimm-like models (mobility of macromolecules in diluted liquid solutions). A qualitative explanation of the self-assembly phenomena originating the observed nanopatterns is given. Finally, ASB-SANS-generated PMMA nanodots arrays have been used as lithographic masks for a silicon substrate and submitted to Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE). As a result, nanopillars with remarkably high aspect ratios have been achieved over areas as large as several millimeters square, highlighting an interesting potential of ASB-SANS in practical applications like photon trapping in photovoltaic cells, surface-enhanced sensors, plasmonics.
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spelling pubmed-55853302017-09-06 Controlled self-organization of polymer nanopatterns over large areas Eryilmaz, Ilknur Hatice Mohanraj, John Dal Zilio, Simone Fraleoni-Morgera, Alessandro Sci Rep Article Self-assembly methods allow to obtain ordered patterns on surfaces with exquisite precision, but often lack in effectiveness over large areas. Here we report on the realization of hierarchically ordered polymethylmethacrylate (PMMA) nanofibres and nanodots over large areas from solution via a fast, easy and low-cost method named ASB-SANS, based on a ternary solution that is cast on the substrate. Simple changes to the ternary solution composition allow to control the transition from nanofibres to nanodots, via a wide range of intermediate topologies. The ternary solution includes the material to be patterned, a liquid solvent and a solid substance able to sublimate. The analysis of the fibres/dots width and inter-pattern distance variations with respect to the ratio between the solution components suggests that the macromolecular chains mobility in the solidified sublimating substance follows Zimm-like models (mobility of macromolecules in diluted liquid solutions). A qualitative explanation of the self-assembly phenomena originating the observed nanopatterns is given. Finally, ASB-SANS-generated PMMA nanodots arrays have been used as lithographic masks for a silicon substrate and submitted to Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE). As a result, nanopillars with remarkably high aspect ratios have been achieved over areas as large as several millimeters square, highlighting an interesting potential of ASB-SANS in practical applications like photon trapping in photovoltaic cells, surface-enhanced sensors, plasmonics. Nature Publishing Group UK 2017-09-05 /pmc/articles/PMC5585330/ /pubmed/28874796 http://dx.doi.org/10.1038/s41598-017-09463-z Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Eryilmaz, Ilknur Hatice
Mohanraj, John
Dal Zilio, Simone
Fraleoni-Morgera, Alessandro
Controlled self-organization of polymer nanopatterns over large areas
title Controlled self-organization of polymer nanopatterns over large areas
title_full Controlled self-organization of polymer nanopatterns over large areas
title_fullStr Controlled self-organization of polymer nanopatterns over large areas
title_full_unstemmed Controlled self-organization of polymer nanopatterns over large areas
title_short Controlled self-organization of polymer nanopatterns over large areas
title_sort controlled self-organization of polymer nanopatterns over large areas
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5585330/
https://www.ncbi.nlm.nih.gov/pubmed/28874796
http://dx.doi.org/10.1038/s41598-017-09463-z
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