Cargando…
Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
Recently, advanced designs and materials emerge to study biologically inspired neuromorphic circuit, such as oxide semiconductor devices. The existence of mobile ions in the oxide semiconductors could be somewhat regarded to be similar with the case of the ions movements among the neurons and synaps...
Autores principales: | Dai, Mingzhi, Wang, Weiliang, Wang, Pengjun, Iqbal, Muhammad Zahir, Annabi, Nasim, Amin, Nasir |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5591224/ https://www.ncbi.nlm.nih.gov/pubmed/28887449 http://dx.doi.org/10.1038/s41598-017-04641-5 |
Ejemplares similares
-
Author Correction: Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
por: Dai, Mingzhi, et al.
Publicado: (2021) -
Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
por: Dai, Chaoqi, et al.
Publicado: (2020) -
Realization of Artificial Neurons and Synapses Based on STDP Designed by an MTJ Device
por: Wang, Manman, et al.
Publicado: (2023) -
Amorphous semiconductors
por: Kugler, Sándor, et al.
Publicado: (2015) -
Amorphous semiconductors
por: Brodsky, Marc
Publicado: (1985)