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Extraordinary Transport Characteristics and Multivalue Logic Functions in a Silicon-Based Negative-Differential Transconductance Device
High-performance negative-differential transconductance (NDT) devices are fabricated in the form of a gated p(+)-i-n(+) Si ultra-thin body transistor. The devices clearly display a Λ-shape transfer characteristic (i.e., Λ-NDT peak) at room temperature, and the NDT behavior is fully based on the gate...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5593999/ https://www.ncbi.nlm.nih.gov/pubmed/28894172 http://dx.doi.org/10.1038/s41598-017-11393-9 |