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Difference in gating and doping effects on the band gap in bilayer graphene
A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate volt...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595964/ https://www.ncbi.nlm.nih.gov/pubmed/28900237 http://dx.doi.org/10.1038/s41598-017-11822-9 |
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author | Uchiyama, Takaki Goto, Hidenori Akiyoshi, Hidehiko Eguchi, Ritsuko Nishikawa, Takao Osada, Hiroshi Kubozono, Yoshihiro |
author_facet | Uchiyama, Takaki Goto, Hidenori Akiyoshi, Hidehiko Eguchi, Ritsuko Nishikawa, Takao Osada, Hiroshi Kubozono, Yoshihiro |
author_sort | Uchiyama, Takaki |
collection | PubMed |
description | A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping. |
format | Online Article Text |
id | pubmed-5595964 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-55959642017-09-15 Difference in gating and doping effects on the band gap in bilayer graphene Uchiyama, Takaki Goto, Hidenori Akiyoshi, Hidehiko Eguchi, Ritsuko Nishikawa, Takao Osada, Hiroshi Kubozono, Yoshihiro Sci Rep Article A band gap is opened in bilayer graphene (BLG) by applying an electric field perpendicular to the layer, which offers versatility and controllability in graphene-based electronics. The presence of the band gap has been confirmed using double-gated BLG devices in which positive and negative gate voltages are applied to each side of BLG. An alternative method to induce the electric field is electron and hole doping of each side of BLG using electron-transfer adsorbates. However, the generation of the band gap by carrier doping is still under investigation. Here, we determined whether the electron/hole doping can produce the electric field required to open the band gap by measuring the temperature dependence of conductivity for BLG placed between electron-donor self-assembled monolayers (SAMs) and electron-acceptor molecules. We found that some devices exhibited a band gap and others did not. The potentially irregular and variable structure of SAMs may affect the configuration of the electric field, yielding variable electronic properties. This study demonstrates the essential differences between gating and doping. Nature Publishing Group UK 2017-09-12 /pmc/articles/PMC5595964/ /pubmed/28900237 http://dx.doi.org/10.1038/s41598-017-11822-9 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Uchiyama, Takaki Goto, Hidenori Akiyoshi, Hidehiko Eguchi, Ritsuko Nishikawa, Takao Osada, Hiroshi Kubozono, Yoshihiro Difference in gating and doping effects on the band gap in bilayer graphene |
title | Difference in gating and doping effects on the band gap in bilayer graphene |
title_full | Difference in gating and doping effects on the band gap in bilayer graphene |
title_fullStr | Difference in gating and doping effects on the band gap in bilayer graphene |
title_full_unstemmed | Difference in gating and doping effects on the band gap in bilayer graphene |
title_short | Difference in gating and doping effects on the band gap in bilayer graphene |
title_sort | difference in gating and doping effects on the band gap in bilayer graphene |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5595964/ https://www.ncbi.nlm.nih.gov/pubmed/28900237 http://dx.doi.org/10.1038/s41598-017-11822-9 |
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