Cargando…
AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics
The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV)...
Autores principales: | , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605682/ https://www.ncbi.nlm.nih.gov/pubmed/28928372 http://dx.doi.org/10.1038/s41598-017-12125-9 |
_version_ | 1783265031025065984 |
---|---|
author | Sun, Wei Tan, Chee-Keong Tansu, Nelson |
author_facet | Sun, Wei Tan, Chee-Keong Tansu, Nelson |
author_sort | Sun, Wei |
collection | PubMed |
description | The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications. |
format | Online Article Text |
id | pubmed-5605682 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-56056822017-09-20 AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics Sun, Wei Tan, Chee-Keong Tansu, Nelson Sci Rep Article The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV) applications. Our numerical analysis indicates significant miniband engineering in the AlN/GaN DA by tuning the thicknesses of AlN barriers and GaN wells, so that the effective energy gap can be engineered from ~3.97 eV to ~5.24 eV. The band structure calculation also shows that the valence subbands of the AlN/GaN DA is properly rearranged leading to the heavy-hole (HH) miniband being the top valence subband, which results in the desired transverse-electric polarized emission. Furthermore, our study reveals that the electron-hole wavefunction overlaps in the AlN/GaN DA structure can be remarkably enhanced up to 97% showing the great potential of improving the internal quantum efficiency for mid- and deep-UV device application. In addition, the optical absorption properties of the AlN/GaN DA are analyzed with wide spectral coverage and spectral tunability in mid- and deep-UV regime. Our findings suggest the potential of implementing the AlN/GaN DA as a promising active region design for high efficiency mid- and deep-UV device applications. Nature Publishing Group UK 2017-09-19 /pmc/articles/PMC5605682/ /pubmed/28928372 http://dx.doi.org/10.1038/s41598-017-12125-9 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Sun, Wei Tan, Chee-Keong Tansu, Nelson AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title | AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title_full | AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title_fullStr | AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title_full_unstemmed | AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title_short | AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics |
title_sort | aln/gan digital alloy for mid- and deep-ultraviolet optoelectronics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605682/ https://www.ncbi.nlm.nih.gov/pubmed/28928372 http://dx.doi.org/10.1038/s41598-017-12125-9 |
work_keys_str_mv | AT sunwei alngandigitalalloyformidanddeepultravioletoptoelectronics AT tancheekeong alngandigitalalloyformidanddeepultravioletoptoelectronics AT tansunelson alngandigitalalloyformidanddeepultravioletoptoelectronics |