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AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics

The AlN/GaN digital alloy (DA) is a superlattice-like nanostructure formed by stacking ultra-thin ( ≤ 4 monolayers) AlN barriers and GaN wells periodically. Here we performed a comprehensive study on the electronics and optoelectronics properties of the AlN/GaN DA for mid- and deep-ultraviolet (UV)...

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Detalles Bibliográficos
Autores principales:	Sun, Wei, Tan, Chee-Keong, Tansu, Nelson
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5605682/ https://www.ncbi.nlm.nih.gov/pubmed/28928372 http://dx.doi.org/10.1038/s41598-017-12125-9

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