Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene

We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole d...

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Autores principales: Min, Kil-Joon, Park, Jaesung, Kim, Wan-Seop, Chae, Dong-Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5608950/
https://www.ncbi.nlm.nih.gov/pubmed/28935931
http://dx.doi.org/10.1038/s41598-017-12425-0
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author Min, Kil-Joon
Park, Jaesung
Kim, Wan-Seop
Chae, Dong-Hun
author_facet Min, Kil-Joon
Park, Jaesung
Kim, Wan-Seop
Chae, Dong-Hun
author_sort Min, Kil-Joon
collection PubMed
description We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole decoherence rate increases prominently with decreasing negative gate voltage while the electron decoherence rate does not exhibit any substantial gate dependence. Quantitatively, the hole decoherence rate is as large as the electron decoherence rate by a factor of two. We discuss possible microscopic origins including spin-exchange scattering consistent with our experimental observations.
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spelling pubmed-56089502017-10-10 Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene Min, Kil-Joon Park, Jaesung Kim, Wan-Seop Chae, Dong-Hun Sci Rep Article We report on asymmetric electron-hole decoherence in epitaxial graphene gated by an ionic liquid. The observed negative magnetoresistance near zero magnetic field for different gate voltages, analyzed in the framework of weak localization, gives rise to distinct electron-hole decoherence. The hole decoherence rate increases prominently with decreasing negative gate voltage while the electron decoherence rate does not exhibit any substantial gate dependence. Quantitatively, the hole decoherence rate is as large as the electron decoherence rate by a factor of two. We discuss possible microscopic origins including spin-exchange scattering consistent with our experimental observations. Nature Publishing Group UK 2017-09-21 /pmc/articles/PMC5608950/ /pubmed/28935931 http://dx.doi.org/10.1038/s41598-017-12425-0 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Min, Kil-Joon
Park, Jaesung
Kim, Wan-Seop
Chae, Dong-Hun
Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title_full Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title_fullStr Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title_full_unstemmed Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title_short Asymmetric Electron-Hole Decoherence in Ion-Gated Epitaxial Graphene
title_sort asymmetric electron-hole decoherence in ion-gated epitaxial graphene
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5608950/
https://www.ncbi.nlm.nih.gov/pubmed/28935931
http://dx.doi.org/10.1038/s41598-017-12425-0
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AT chaedonghun asymmetricelectronholedecoherenceiniongatedepitaxialgraphene

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