Ohmic contact between iridium film and hydrogen-terminated single crystal diamond

Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evap...

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Detalles Bibliográficos
Autores principales: Wang, Yan-Feng, Chang, Xiaohui, Li, Shuoye, Zhao, Dan, Shao, Guoqing, Zhu, Tianfei, Fu, Jiao, Zhang, Pengfei, Chen, Xudong, Li, Fengnan, Liu, Zongchen, Fan, Shuwei, Bu, Renan, Wen, Feng, Zhang, Jingwen, Wang, Wei, Wang, Hong-Xing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610238/
https://www.ncbi.nlm.nih.gov/pubmed/28939907
http://dx.doi.org/10.1038/s41598-017-09380-1
Descripción
Sumario:Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond.

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