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Ohmic contact between iridium film and hydrogen-terminated single crystal diamond
Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evap...
| Autores principales: | , , , , , , , , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610238/ https://www.ncbi.nlm.nih.gov/pubmed/28939907 http://dx.doi.org/10.1038/s41598-017-09380-1 |
| _version_ | 1783265740505219072 |
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| author | Wang, Yan-Feng Chang, Xiaohui Li, Shuoye Zhao, Dan Shao, Guoqing Zhu, Tianfei Fu, Jiao Zhang, Pengfei Chen, Xudong Li, Fengnan Liu, Zongchen Fan, Shuwei Bu, Renan Wen, Feng Zhang, Jingwen Wang, Wei Wang, Hong-Xing |
| author_facet | Wang, Yan-Feng Chang, Xiaohui Li, Shuoye Zhao, Dan Shao, Guoqing Zhu, Tianfei Fu, Jiao Zhang, Pengfei Chen, Xudong Li, Fengnan Liu, Zongchen Fan, Shuwei Bu, Renan Wen, Feng Zhang, Jingwen Wang, Wei Wang, Hong-Xing |
| author_sort | Wang, Yan-Feng |
| collection | PubMed |
| description | Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond. |
| format | Online Article Text |
| id | pubmed-5610238 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2017 |
| publisher | Nature Publishing Group UK |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-56102382017-10-10 Ohmic contact between iridium film and hydrogen-terminated single crystal diamond Wang, Yan-Feng Chang, Xiaohui Li, Shuoye Zhao, Dan Shao, Guoqing Zhu, Tianfei Fu, Jiao Zhang, Pengfei Chen, Xudong Li, Fengnan Liu, Zongchen Fan, Shuwei Bu, Renan Wen, Feng Zhang, Jingwen Wang, Wei Wang, Hong-Xing Sci Rep Article Investigation of ohmic contact between iridium (Ir) film and hydrogen-terminated single crystal diamond has been carried out with annealing temperature from 300 to 600 °C in argon (Ar) and hydrogen ambient. Electrodes were deposited on hydrogen-terminated single crystal diamond by electron beam evaporation technique, and specific contact resistivity has been measured by transmission line model. The interface between Ir film and hydrogen-terminated single crystal diamond was characterized by transmission electron microscopy and energy dispersive X-ray spectroscopy. Theoretical calculation value of barrier height between Ir film and hydrogen-terminated single crystal diamond was around −1.1 eV. All results indicate that an excellent ohmic contact could be formed between Ir film and hydrogen-terminated single diamond. Nature Publishing Group UK 2017-09-22 /pmc/articles/PMC5610238/ /pubmed/28939907 http://dx.doi.org/10.1038/s41598-017-09380-1 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
| spellingShingle | Article Wang, Yan-Feng Chang, Xiaohui Li, Shuoye Zhao, Dan Shao, Guoqing Zhu, Tianfei Fu, Jiao Zhang, Pengfei Chen, Xudong Li, Fengnan Liu, Zongchen Fan, Shuwei Bu, Renan Wen, Feng Zhang, Jingwen Wang, Wei Wang, Hong-Xing Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title | Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title_full | Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title_fullStr | Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title_full_unstemmed | Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title_short | Ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| title_sort | ohmic contact between iridium film and hydrogen-terminated single crystal diamond |
| topic | Article |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5610238/ https://www.ncbi.nlm.nih.gov/pubmed/28939907 http://dx.doi.org/10.1038/s41598-017-09380-1 |
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