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Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition
Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an e...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5612810/ https://www.ncbi.nlm.nih.gov/pubmed/28971149 http://dx.doi.org/10.1016/j.heliyon.2017.e00404 |