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Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an e...

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Detalles Bibliográficos
Autores principales:	Moore, Eric, Jarrell, Joshua, Cao, Lei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Elsevier 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5612810/ https://www.ncbi.nlm.nih.gov/pubmed/28971149 http://dx.doi.org/10.1016/j.heliyon.2017.e00404

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