Oxygen Vacancy in WO(3) Film-based FET with Ionic Liquid Gating

Ionic liquid gating is a versatile method for inducing a metal-insulator transition in field-effect transistor device structures. The mechanism of carrier doping in metal oxide films is under debate. Ionic liquid gating of a WO(3) film-based field effect transistor is discussed in this report. Flat...

Descripción completa

Detalles Bibliográficos
Autores principales: Kalhori, Hossein, Coey, Michael, Abdolhosseini Sarsari, Ismaeil, Borisov, Kiril, Porter, Stephen Barry, Atcheson, Gwenael, Ranjbar, Mehdi, Salamati, Hadi, Stamenov, Plamen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5612984/
https://www.ncbi.nlm.nih.gov/pubmed/28947834
http://dx.doi.org/10.1038/s41598-017-12516-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5612984/
https://www.ncbi.nlm.nih.gov/pubmed/28947834
http://dx.doi.org/10.1038/s41598-017-12516-y

Ejemplares similares