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Artificial light-harvesting n-type porphyrin for panchromatic organic photovoltaic devices

A near-infrared-harvesting n-type porphyrin-based acceptor for organic photovoltaics (OPVs) was developed. The n-type acceptor, PDI–P(Zn)–PDI, was designed by connecting a zinc porphyrin (P(Zn)) core to two perylenediimide (PDI) wings through ethyne bridges. A narrow bandgap of 1.27 eV was achieved...

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Detalles Bibliográficos
Autores principales: Hadmojo, Wisnu Tantyo, Yim, Dajeong, Aqoma, Havid, Ryu, Du Yeol, Shin, Tae Joo, Kim, Hyun Woo, Hwang, Eojin, Jang, Woo-Dong, Jung, In Hwan, Jang, Sung-Yeon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Royal Society of Chemistry 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5613227/
https://www.ncbi.nlm.nih.gov/pubmed/28970895
http://dx.doi.org/10.1039/c7sc01275f
Descripción
Sumario:A near-infrared-harvesting n-type porphyrin-based acceptor for organic photovoltaics (OPVs) was developed. The n-type acceptor, PDI–P(Zn)–PDI, was designed by connecting a zinc porphyrin (P(Zn)) core to two perylenediimide (PDI) wings through ethyne bridges. A narrow bandgap of 1.27 eV was achieved through the extended π-conjugation and intramolecular charge transfer between the strongly electron-donating P(Zn) core and the electron-accepting PDI wings. A bulk heterojunction (BHJ) structured photovoltaic device fabricated from PDI–P(Zn)–PDI with PTB7-Th exhibited panchromatic photon-to-current conversion from 350 to 900 nm. A power conversion efficiency of 5.25% with a remarkably low E (loss) of 0.54 eV was achieved by optimizing the nanomorphology of the BHJ films by adding pyridine and by controlling the ZnO/BHJ interfacial properties.