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Stoichiometric control of the density of states in PbS colloidal quantum dot solids
Colloidal quantum dots, and nanostructured semiconductors in general, carry the promise of overcoming the limitations of classical materials in chemical and physical properties and in processability. However, sufficient control of electronic properties, such as carrier concentration and carrier mobi...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5621976/ https://www.ncbi.nlm.nih.gov/pubmed/28975153 http://dx.doi.org/10.1126/sciadv.aao1558 |
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author | Balazs, Daniel M. Bijlsma, Klaas I. Fang, Hong-Hua Dirin, Dmitry N. Döbeli, Max Kovalenko, Maksym V. Loi, Maria A. |
author_facet | Balazs, Daniel M. Bijlsma, Klaas I. Fang, Hong-Hua Dirin, Dmitry N. Döbeli, Max Kovalenko, Maksym V. Loi, Maria A. |
author_sort | Balazs, Daniel M. |
collection | PubMed |
description | Colloidal quantum dots, and nanostructured semiconductors in general, carry the promise of overcoming the limitations of classical materials in chemical and physical properties and in processability. However, sufficient control of electronic properties, such as carrier concentration and carrier mobility, has not been achieved until now, limiting their application. In bulk semiconductors, modifications of electronic properties are obtained by alloying or doping, an approach that is not viable for structures in which the surface is dominant. The electronic properties of PbS colloidal quantum dot films are fine-tuned by adjusting their stoichiometry, using the large surface area of the nanoscale building blocks. We achieve an improvement of more than two orders of magnitude in the hole mobility, from below 10(−3) to above 0.1 cm(2)/V⋅s, by substituting the iodide ligands with sulfide while keeping the electron mobility stable (~1 cm(2)/V⋅s). This approach is not possible in bulk semiconductors, and the developed method will likely contribute to the improvement of solar cell efficiencies through better carrier extraction and to the realization of complex (opto)electronic devices. |
format | Online Article Text |
id | pubmed-5621976 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-56219762017-10-03 Stoichiometric control of the density of states in PbS colloidal quantum dot solids Balazs, Daniel M. Bijlsma, Klaas I. Fang, Hong-Hua Dirin, Dmitry N. Döbeli, Max Kovalenko, Maksym V. Loi, Maria A. Sci Adv Research Articles Colloidal quantum dots, and nanostructured semiconductors in general, carry the promise of overcoming the limitations of classical materials in chemical and physical properties and in processability. However, sufficient control of electronic properties, such as carrier concentration and carrier mobility, has not been achieved until now, limiting their application. In bulk semiconductors, modifications of electronic properties are obtained by alloying or doping, an approach that is not viable for structures in which the surface is dominant. The electronic properties of PbS colloidal quantum dot films are fine-tuned by adjusting their stoichiometry, using the large surface area of the nanoscale building blocks. We achieve an improvement of more than two orders of magnitude in the hole mobility, from below 10(−3) to above 0.1 cm(2)/V⋅s, by substituting the iodide ligands with sulfide while keeping the electron mobility stable (~1 cm(2)/V⋅s). This approach is not possible in bulk semiconductors, and the developed method will likely contribute to the improvement of solar cell efficiencies through better carrier extraction and to the realization of complex (opto)electronic devices. American Association for the Advancement of Science 2017-09-29 /pmc/articles/PMC5621976/ /pubmed/28975153 http://dx.doi.org/10.1126/sciadv.aao1558 Text en Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited. |
spellingShingle | Research Articles Balazs, Daniel M. Bijlsma, Klaas I. Fang, Hong-Hua Dirin, Dmitry N. Döbeli, Max Kovalenko, Maksym V. Loi, Maria A. Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title | Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title_full | Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title_fullStr | Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title_full_unstemmed | Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title_short | Stoichiometric control of the density of states in PbS colloidal quantum dot solids |
title_sort | stoichiometric control of the density of states in pbs colloidal quantum dot solids |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5621976/ https://www.ncbi.nlm.nih.gov/pubmed/28975153 http://dx.doi.org/10.1126/sciadv.aao1558 |
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