Memory characteristics of silicon nanowire transistors generated by weak impact ionization

In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an o...

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Detalles Bibliográficos
Autores principales: Lim, Doohyeok, Kim, Minsuk, Kim, Yoonjoong, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5622113/
https://www.ncbi.nlm.nih.gov/pubmed/28963456
http://dx.doi.org/10.1038/s41598-017-12347-x
Descripción
Sumario:In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~10(5) and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.

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