Memory characteristics of silicon nanowire transistors generated by weak impact ionization

In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an o...

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Detalles Bibliográficos
Autores principales: Lim, Doohyeok, Kim, Minsuk, Kim, Yoonjoong, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5622113/
https://www.ncbi.nlm.nih.gov/pubmed/28963456
http://dx.doi.org/10.1038/s41598-017-12347-x
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author Lim, Doohyeok
Kim, Minsuk
Kim, Yoonjoong
Kim, Sangsig
author_facet Lim, Doohyeok
Kim, Minsuk
Kim, Yoonjoong
Kim, Sangsig
author_sort Lim, Doohyeok
collection PubMed
description In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~10(5) and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications.
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spelling pubmed-56221132017-10-12 Memory characteristics of silicon nanowire transistors generated by weak impact ionization Lim, Doohyeok Kim, Minsuk Kim, Yoonjoong Kim, Sangsig Sci Rep Article In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. Our bendable SiNW FETs show not only superior switching characteristics such as an on/off current ratio of ~10(5) and steep subthreshold swing (~5 mV/dec) but also reliable SRAM characteristics. The SRAM characteristics originate from the positive feedback loops in the SiNW FETs generated by weak impact ionization. This paper describes in detail the operating mechanism of our device and demonstrates the potential of bendable SiNW FETs for future SRAM applications. Nature Publishing Group UK 2017-09-29 /pmc/articles/PMC5622113/ /pubmed/28963456 http://dx.doi.org/10.1038/s41598-017-12347-x Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Lim, Doohyeok
Kim, Minsuk
Kim, Yoonjoong
Kim, Sangsig
Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title_full Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title_fullStr Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title_full_unstemmed Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title_short Memory characteristics of silicon nanowire transistors generated by weak impact ionization
title_sort memory characteristics of silicon nanowire transistors generated by weak impact ionization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5622113/
https://www.ncbi.nlm.nih.gov/pubmed/28963456
http://dx.doi.org/10.1038/s41598-017-12347-x
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AT kimsangsig memorycharacteristicsofsiliconnanowiretransistorsgeneratedbyweakimpactionization

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