Understanding contact gating in Schottky barrier transistors from 2D channels

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that signif...

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Autores principales: Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626721/
https://www.ncbi.nlm.nih.gov/pubmed/28974712
http://dx.doi.org/10.1038/s41598-017-12816-3
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author Prakash, Abhijith
Ilatikhameneh, Hesameddin
Wu, Peng
Appenzeller, Joerg
author_facet Prakash, Abhijith
Ilatikhameneh, Hesameddin
Wu, Peng
Appenzeller, Joerg
author_sort Prakash, Abhijith
collection PubMed
description In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe(2) devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels.
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spelling pubmed-56267212017-10-12 Understanding contact gating in Schottky barrier transistors from 2D channels Prakash, Abhijith Ilatikhameneh, Hesameddin Wu, Peng Appenzeller, Joerg Sci Rep Article In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that significantly affects the carrier injection from the source electrode in back-gated field effect transistors. The two-path model is validated by a careful comparison with experimental characteristics obtained from a large number of back-gated WSe(2) devices with various channel thicknesses. Our findings are believed to be of critical importance for the quantitative analysis of many three-terminal devices with ultrathin body channels. Nature Publishing Group UK 2017-10-03 /pmc/articles/PMC5626721/ /pubmed/28974712 http://dx.doi.org/10.1038/s41598-017-12816-3 Text en © The Author(s) 2017 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Prakash, Abhijith
Ilatikhameneh, Hesameddin
Wu, Peng
Appenzeller, Joerg
Understanding contact gating in Schottky barrier transistors from 2D channels
title Understanding contact gating in Schottky barrier transistors from 2D channels
title_full Understanding contact gating in Schottky barrier transistors from 2D channels
title_fullStr Understanding contact gating in Schottky barrier transistors from 2D channels
title_full_unstemmed Understanding contact gating in Schottky barrier transistors from 2D channels
title_short Understanding contact gating in Schottky barrier transistors from 2D channels
title_sort understanding contact gating in schottky barrier transistors from 2d channels
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626721/
https://www.ncbi.nlm.nih.gov/pubmed/28974712
http://dx.doi.org/10.1038/s41598-017-12816-3
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