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Understanding contact gating in Schottky barrier transistors from 2D channels

In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the “conventional” model for SB-FETs with the phenomenon of contact gating – an effect that signif...

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Detalles Bibliográficos
Autores principales: Prakash, Abhijith, Ilatikhameneh, Hesameddin, Wu, Peng, Appenzeller, Joerg
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5626721/
https://www.ncbi.nlm.nih.gov/pubmed/28974712
http://dx.doi.org/10.1038/s41598-017-12816-3