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Intercalation of Si between MoS(2) layers

We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS(2)). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS(2) layers. Our evide...

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Detalles Bibliográficos
Autores principales:	van Bremen, Rik, Yao, Qirong, Banerjee, Soumya, Cakir, Deniz, Oncel, Nuri, Zandvliet, Harold J W
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2017
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5629401/ https://www.ncbi.nlm.nih.gov/pubmed/29046843 http://dx.doi.org/10.3762/bjnano.8.196

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