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Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties

Deep-level defects in n-type GaAs(1−x)Bi(x) having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been studied by contactless electroreflectance and photo...

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Detalles Bibliográficos
Autores principales:	Gelczuk, Łukasz, Kopaczek, Jan, Rockett, Thomas B. O., Richards, Robert D., Kudrawiec, Robert
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634438/ https://www.ncbi.nlm.nih.gov/pubmed/28993673 http://dx.doi.org/10.1038/s41598-017-13191-9

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