Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation

The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur fr...

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Detalles Bibliográficos
Autores principales: Guo, Caixia, Wang, Tianxing, Xia, Congxin, Liu, Yufang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634465/
https://www.ncbi.nlm.nih.gov/pubmed/28993688
http://dx.doi.org/10.1038/s41598-017-13212-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634465/
https://www.ncbi.nlm.nih.gov/pubmed/28993688
http://dx.doi.org/10.1038/s41598-017-13212-7

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