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Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation
The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur fr...
Autores principales: | Guo, Caixia, Wang, Tianxing, Xia, Congxin, Liu, Yufang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634465/ https://www.ncbi.nlm.nih.gov/pubmed/28993688 http://dx.doi.org/10.1038/s41598-017-13212-7 |
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