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Evidence for in-gap surface states on the single phase SmB(6)(001) surface

Structural and electronic properties of the SmB(6)(001) single-crystal surface prepared by Ar(+) ion sputtering and controlled annealing are investigated by scanning tunneling microscopy. In contrast to the cases of cleaved surfaces, we observe a single phase surface with a non-reconstructed p(1 × 1...

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Detalles Bibliográficos
Autores principales: Miyamachi, Toshio, Suga, Shigemasa, Ellguth, Martin, Tusche, Christian, Schneider, Claus M., Iga, Fumitoshi, Komori, Fumio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5634509/
https://www.ncbi.nlm.nih.gov/pubmed/28993642
http://dx.doi.org/10.1038/s41598-017-12887-2
Descripción
Sumario:Structural and electronic properties of the SmB(6)(001) single-crystal surface prepared by Ar(+) ion sputtering and controlled annealing are investigated by scanning tunneling microscopy. In contrast to the cases of cleaved surfaces, we observe a single phase surface with a non-reconstructed p(1 × 1) lattice on the entire surface at an optimized annealing temperature. The surface is identified as Sm-terminated on the basis of spectroscopic measurements. On a structurally uniform surface, the emergence of the in-gap state, a robust surface state against structural variation, is further confirmed inside a Kondo hybridization gap at 4.4 K by temperature and atomically-resolved spatial dependences of the differential conductance spectrum near the Fermi energy.