Cargando…
A novel true random number generator based on a stochastic diffusive memristor
The intrinsic variability of switching behavior in memristors has been a major obstacle to their adoption as the next generation of universal memory. On the other hand, this natural stochasticity can be valuable for hardware security applications. Here we propose and demonstrate a novel true random...
Autores principales: | Jiang, Hao, Belkin, Daniel, Savel’ev, Sergey E., Lin, Siyan, Wang, Zhongrui, Li, Yunning, Joshi, Saumil, Midya, Rivu, Li, Can, Rao, Mingyi, Barnell, Mark, Wu, Qing, Yang, J. Joshua, Xia, Qiangfei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5638922/ https://www.ncbi.nlm.nih.gov/pubmed/29026110 http://dx.doi.org/10.1038/s41467-017-00869-x |
Ejemplares similares
-
Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
por: Li, Can, et al.
Publicado: (2018) -
An artificial spiking afferent nerve based on Mott memristors for neurorobotics
por: Zhang, Xumeng, et al.
Publicado: (2020) -
Capacitive neural network with neuro-transistors
por: Wang, Zhongrui, et al.
Publicado: (2018) -
Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors
por: Yi, Wei, et al.
Publicado: (2016) -
Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
por: Jiang, Hao, et al.
Publicado: (2016)