Evidence of indirect gap in monolayer WSe(2)

Monolayer transition metal dichalcogenides, such as MoS(2) and WSe(2), have been known as direct gap semiconductors and emerged as new optically active materials for novel device applications. Here we reexamine their direct gap properties by investigating the strain effects on the photoluminescence...

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Detalles Bibliográficos
Autores principales: Hsu, Wei-Ting, Lu, Li-Syuan, Wang, Dean, Huang, Jing-Kai, Li, Ming-Yang, Chang, Tay-Rong, Chou, Yi-Chia, Juang, Zhen-Yu, Jeng, Horng-Tay, Li, Lain-Jong, Chang, Wen-Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640683/
https://www.ncbi.nlm.nih.gov/pubmed/29030548
http://dx.doi.org/10.1038/s41467-017-01012-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5640683/
https://www.ncbi.nlm.nih.gov/pubmed/29030548
http://dx.doi.org/10.1038/s41467-017-01012-6

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